TPS61200DRCTTIStep-Up Regulator 0.3V Input Voltage Boost Converter with 1.3A Switches and 'Down Mode' in 3x3 QFN Conv DC-DC 0.3V to 5.5V Step Up Single-Out 1.8V to 5.5V 0.6A 10Pin VSON EP T/R
¥
3.71
显示的图像仅供参考,应从产品数据表中获得准确的规格。
TPS61200DRCTTI
制造商:
TI
制造商型号#:
TPS61200DRCT
百芯编号#:
CM5890726
价格(CNY):
¥
3.71
百芯库存:
194,352
个
库存地点:香港
可供应量:
205,521
个在库
此为供应商库存,需要与销售确认
产品类别:
DCDC,转换器,DC-DC
产品描述:
Step-Up Regulator 0.3V Input Voltage Boost Converter with 1.3A Switches and 'Down Mode' in 3x3 QFN Conv DC-DC 0.3V to 5.5V Step Up Single-Out 1.8V to 5.5V 0.6A 10Pin VSON EP T/R
The TPS61200DRCT is a 0.3V Input Voltage Boost Converter with 1.3A switches and "Down Mode" that provide a power supply solution for products powered by either a single-cell, two-cell or three-cell alkaline, NiCd or NiMH or one-cell Li-ion or Li-polymer battery. It is also used in fuel cell or solar cell powered devices where the capability of handling low input voltages is essential. Possible output currents depend on the input to output voltage ratio. The boost converter is based on a fixed frequency, pulse-width-modulation controller using synchronous rectification to obtain maximum efficiency. At low load currents, the converter enters the power save mode to maintain a high efficiency over a wide load current range. The power save mode can be disabled, forcing the converter to operate at a fixed switching frequency. The average input current is limited to a maximum value of 1500mA. The converter can be disabled to minimize battery drain.
More than 90% efficiency
Automatic transition between boost mode and down conversion mode
Less than 55µA device quiescent current
Start-up into full load at 0.5V input voltage
Programmable under-voltage lockout threshold
Output short-circuit protection under all operating conditions
Fixed and adjustable output voltage options from 1.8 to 5.5V
Power save mode for improved efficiency at low output power
Forced fixed frequency operation possible
Load disconnect during shutdown
Over-temperature protection
Green product and no Sb/Br
This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.