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STHV800L 库存 & 价格

ST Microelectronics Ultrasound Pulser 56Pin TFLGA T/R
1079.52
STHV800L
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STHV800L ST Microelectronics
ST Microelectronics
  • 制造商:
    ST Microelectronics
  • 制造商型号#:
    STHV800L
  • 百芯编号#:
    CM5369514
  • 价格(CNY):
    1079.52
  • 百芯库存:
    227
  • 可供应量:
    184 个在库
    此为供应商库存,需要与销售确认
  • 产品类别:
    模拟,开关芯片
  • 产品描述:
    Ultrasound Pulser 56Pin TFLGA T/R
  • 文档: 3D模型
STHV800L 购买 STHV800L 库存和价格更新于 2024-08-11 03:50:22
  • 刷新
    器件型号: STHV800L
    百芯编号: CM5369514
    制造商: ST Microelectronics
    封装: TFLGA-56LD
    价格
    1079.52
    总计: 411
    MOQ: 1
    库存地点: 香港
    发货日期: 2024/08/16 (预期 )
  • 购买
    *由于库存数量、价格不断波动,请 联系我们 获取型号最新价格和库存。

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    类型
    描述
    选择
    制造商
    ST Microelectronics
    类别
    模拟,开关芯片
    3D模型
     3D模型
    安装方式
    Surface Mount
    引脚数
    56 Pin
    封装
    TFLGA-56LD
    针脚数
    56 Position
    工作温度(Max)
    125 ℃
    工作温度(Min)
    -40 ℃
    电源电压(Max)
    3.6 V
    电源电压(Min)
    1.8 V
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    尺寸 & 包装
    类型
    描述
    长度
    8 mm
    宽度
    8 mm
    高度
    0.9 mm
    工作温度
    -40℃ ~ 125℃
    产品生命周期
    Active
    包装方式
    Tray
    符合标准
    类型
    描述
    RoHS标准
    RoHS Compliant
    含铅标准
    Lead Free
    出口分类
    类型
    描述
    ECCN代码
    EAR99
    产品概述
    • The STHV800 is an octal, monolithic, high-voltage and high-speed pulse generator. It is designed for medical ultrasound applications, but can be used for other piezoelectric, capacitive or MEMS transducers.
    • The device integrates a controller logic interface circuit (compatible with both 1.8 V and 3.3 V input signals), level translators, MOSFET gate drivers, noise blocking diodes, and high power P-channel and N-channel MOSFETs as the output stage for each channel. These MOSFETs are capable of providing more than 2 A of peak output current. Each channel has a dedicated bridge in order to reduce power dissipation and jitter during continuous wave mode (peak current is limited to 0.3 A). This CW bridge has dedicated power supplies (HV_CW) which are fully independent on the main HV supplies.
    • These HV_CW supplies can be shorted to the HV supplies. The fundamental structure of each channel also consists of active clamping to ground circuitry, anti-leakage and anti-memory block, a thermal sensor to protect the device and an integrated TR-switch (just 8 Ω as equivalent resistor ) to connect the HV output to its LV output, guaranteeing strong decoupling during the transmission phase.
    • The eight independent T/R switches can be used in both a dedicated RX chain per channel or in a multiplexing configuration.
    • The clamp circuit has a current capability up to 2 A and works directly on the output pin, carrying this node exactly to zero. This feature allows minimized injection change during the transition from clamp to RX state.
    • In addition, the STHV800 includes self-biasing circuitry which allows very low power consumption during the RX phase (down to 200 µW global power dissipation) and thermal shutdown block sensing by an external dedicated pin (THSD).
    • One of the main benefits of this device is that it requires very few external components: only decoupling capacitors on the HV and LV supplies, and a resistor to pull up the THSD pin (moreover, this resistor can be shared by many devices).
    • Each channel is driven independently by only 2 digital bits, which in CW mode become one bit. An external clock can be used with the STHV800 to synchronize all the input signals. This feature, however, is optional: if the CK pin is tied to ground the device works in asynchronous mode.
    • **Key Features**
    • High-density ultrasound transmitter
    • Two independent half-bridges per channel
    • 0 to ±90 V output voltage
    • Power-up free
    • Synchronization of the input signals (selectable) by an external clock
    • Up to 20 MHz operating frequency
    • Low-power, high-voltage, high-speed drivers
    • 2 independently-supplied half bridges (shorted-option) for each channel, one dedicated to continuous wave (CW) mode
    • Main half bridge: ±2 A source and sink currentDown to 20 ps jitterLow 2nd harmonic distortion
    • * CW half bridge:±0.3 A source and sink currentDown to 10 ps jitterVery low power consumption
    • Fully integrated real clamping-to-ground function
    • 8 Ω synchronous active clamp
    • ±2 A source and sink current
    • Fully integrated TR switch
    • 8 Ω ON resistance
    • Up to 300 MHz BW
    • Current consumption down to 10 μA in RX phase
    • Receiver multiplexing function
    • 1.8 V to 3.6 V CMOS logic interface
    • Auxiliary integrated circuits
    • Noise blocking diodes
    • Anti-leakage on output node
    • Fully self-biasing architecture
    • Thermal protection
    • Latch-up free due to HV SOI technology
    • Very few external passive components or supplies needed

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