You won"t need to worry about any lagging in your circuit with this STGW30N120KD IGBT transistor from STMicroelectronics. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 220000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 125 °C. It is made in a single configuration.