The STB13007DT4 is a NPN fast-switching Power Transistor manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure to enhance switching speeds. Improved specification offers lower leakage current, tighter gain range, DC current gain pre-selection and tighter storage time range.
Integrated free-wheeling diode
Low spread of dynamic parameters
Minimum lot-to-lot spread for reliable operation
Very high switching speed
Large RBSOA
In compliance with the 2002/93/EC European directive