SS39ETHoneywellMagnetic Hall-Effect Sensor ICs: SS39ET/SS49E/SS59ET Series Low Cost Linear Hall-Effect Sensor IC, Energy Efficient 2.7VDC to 6.5VDC, -40° C to 100° C Temperature Range, SOT23 Surface Mount, 3000 per Reel
¥
1.16
显示的图像仅供参考,应从产品数据表中获得准确的规格。
SS39ETHoneywell
制造商:
Honeywell
制造商型号#:
SS39ET
百芯编号#:
CM825022
价格(CNY):
¥
1.16
百芯库存:
954
个
库存地点:香港
可供应量:
331
个在库
此为供应商库存,需要与销售确认
产品类别:
地磁,传感器
产品描述:
Magnetic Hall-Effect Sensor ICs: SS39ET/SS49E/SS59ET Series Low Cost Linear Hall-Effect Sensor IC, Energy Efficient 2.7VDC to 6.5VDC, -40° C to 100° C Temperature Range, SOT23 Surface Mount, 3000 per Reel
The SS39ET is a small, versatile and linear hall-effect Sensor IC, operated by the magnetic field from a permanent magnet or an electromagnet. The linear sourcing output voltage is set by the supply voltage and varies in proportion to the strength of the magnetic field. The low voltage capability (as low as 2.7VDC) and reduced current consumption of only 6mA (typical at 5VDC) help make this product energy efficient. The integrated circuitry features low noise output, which makes it unnecessary to use external filtering. It also includes thin film resistors to provide increased temperature stability and accuracy. These products interface with many electrical components without buffering and the thermally balanced integrated circuit provides stable operation over the full temperature range.
Miniature and Sub-miniature Construction, Designed for Compact Designs with Tight Space Requirements
Energy Efficient, Low Current Consumption of 6mA at 5VDC
Easy PC Board Interface, Single Current Sourcing Output for Common Electronic Circuits
Circuit Design Flexibility, Voltage Range of 2.7 to 6.5VDC
Low Noise Output, Virtually Eliminates Need for Filtering
Stable Output, Thin Film Resistors Improve Accuracy
Application Flexibility, Responds to Either Positive or Negative Gauss
ESD sensitive device, take proper precaution while handling the device, Absolute maximum ratings are the extreme limits that the device will withstand without damage to the device.