directly from logic circuit supply voltages. 5V range, thereby facilitating true on-off power control provides full rated conductance at gate biases in the 3V to accomplished through a special gate oxide design which switches for bipolar transistors. This performance is
switching converters, motor relay drivers and emitter such as programmable controllers, switching regulators, These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI
integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications
Features
• 16A, 50V
•rDS(ON)= 0.047Ω
• UIS SOA Rating Curve (Single Pulse)
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from CMOS, NMOS, TTL Circuits