You can use this NGTB35N65FL2WG IGBT transistor from ON Semiconductor as an electronic switch. Its maximum power dissipation is 300000 mW. It has a maximum collector emitter voltage of 650 V. This device utilizes field stop ii|trench technology. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C.