The MOCD213M device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications and eliminates the need for through-the-board mounting.
Features
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Closely Matched Current Transfer Ratios
Minimum BVCEO of 70 V Guaranteed
MOCD207M, MOCD208M
Minimum BVCEO of 30 V Guaranteed
MOCD211M, MOCD213M, MOCD217M
Low LED Input Current Required for Easier Logic Interfacing
MOCD217M
Convenient Plastic SOIC-8 Surface Mountable Package Style, with 0.050" Lead Spacing
Safety and Regulatory Approvals:
UL1577, 2,500 VACRMS for 1 Minute
DIN-EN/IEC60747-5-5, 565 V Peak Working Insulation Voltage