The 4N38M, H11D1M, H11D3M, and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
Features
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High Voltage:
MOC8204M, BVCEO= 400 V
H11D1M, BVCEO= 300 V
H11D3M, BVCEO= 200 V
Safety and Regulatory Approvals:
UL1577, 4,170 VACRMS for 1 Minute
DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage