Don"t be afraid to step up the amps in your device when using this IXDN55N120D1 IGBT transistor from Ixys Corporation. Its maximum power dissipation is 450000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single dual emitter configuration. This IGBT transistor has an operating temperature range of -40 °C to 150 °C.