The IPT020N10N3 is a N-channel Power MOSFET optimized for high current applications. This new package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.
Industry"s lowest R DS(on)
Highest current capability up to 300A
Very low package parasitic and inductances
Less paralleling and cooling required
Highest system reliability
Enabling very compact design
Normal level
Excellent gate charge x RDS (ON) product (FOM)
Extremely low ON-resistance RDS (ON)
High current capability
Qualified according to JEDEC for target application
