The IPD122N10N3 G is an OptiMOS™ N-channel Power MOSFET offers superior solutions for high efficiency and high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS (ON) and FOM (figure of merit).
Excellent switching performance
World"s lowest RDS (ON)
Very low Qg and Qgd
Excellent gate charge x RDS (ON) product (FOM)
Halogen-free, Green device
Environmentally friendly
Increased efficiency
Highest power density
Less paralleling required
Smallest board-space consumption
Easy-to-design products
Normal level
Qualified according to JEDEC for target application
Ideal for high-frequency switching and synchronous rectification