IPB60R180P7InfineonThe 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
¥
21.31
显示的图像仅供参考,应从产品数据表中获得准确的规格。
IPB60R180P7Infineon
制造商:
Infineon
制造商型号#:
IPB60R180P7
百芯编号#:
CM284552554
价格(CNY):
¥
21.31
百芯库存:
243
个
库存地点:
可供应量:
164
个在库
此为供应商库存,需要与销售确认
产品描述:
The 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
The 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
Summary of Features:
**Efficiency**
600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G
**Ease-of-use**
Integrated ESD diode from 180mN and above R DS(on)s
Integrated gate resistor R G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Benefits:
**Efficiency**
Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency
**Ease-of-use**
Ease-of-use in manufacturing environments by stopping ESD failures occurring
Integrated R G reduces MOSFET oscillation sensitivity
MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
Excellent ruggedness during hard commutation of the body diode seen in LLC topology
Suitable for a wide variety of end applications and output powers
Parts available suitable for consumer and industrial applications