IKY75N120CH3InfineonLow switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
￥
170.94
显示的图像仅供参考，应从产品数据表中获得准确的规格。
IKY75N120CH3Infineon
制造商:
Infineon
制造商型号#:
IKY75N120CH3
百芯编号#:
CM150254455
价格(CNY):
￥
170.94
百芯库存:
240
个
库存地点:
可供应量:
147
个在库
此为供应商库存，需要与销售确认
产品描述:
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
Responding to the market requirement of high power density and highest performance discrete products Infineon introduces the new Kelvin Emitter TO-247PLUS 4pin package for 1200V IGBT. Higher current capability, improved thermal behaviour, extended C-E creepage are the key features of the TO-247PLUS package. The 4pin package configuration provides ultra-low inductance to the gate-emitter control loop with the 4pin package directly to the gate driver and allows for reduction the both of E on and E off losses amounting up to 20% lower total switching losses E ts.
Summary of Features:
Extremely low control inductance loop with extra emitter pin for driver feedback
20% reduction in total switching losses compared to 3pin package using same technology
Up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint
Benefits:
Highest efficiency with lowest switching losses 1200 V IGBT
High power density 1200V discrete IGBT
Lower thermal resistance R th(jh) and improved by ~15% heat dissipation capability of TO-247PLUS vs TO-247
