The H11G2M is a 80V 6-pin DIP high voltage photodarlington-type Optically Coupled Optocoupler consist of gallium arsenide infrared emitting diode coupled with a silicon Darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.
High sensitivity to low input current (minimum 500% CTR at IF= 1mA)
Low leakage current at elevated temperature (maximum 100µA at 80°C)