The FOD819 consists of a gallium arsenide (GaAs) infra-red emitting diode, driving a high speed photo detector with integrated base-to-emitter resistor, R, in a 4-pin dual-in-line package. It is designed to be an improved replacement to the popular FOD817 Series when higher speed performance is required in isolated data signal transmission.
Features
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High Speed Performance ~ 30kHz
Current Transfer Ratio: 100% to 600%
Minimum BVCEO of 40V Guaranteed
Safety and Regulatory Approvals:
UL1577, 5,000 VACRMS for 1 Minute
DIN EN/IEC60747-5-5, 850V Peak Working Insulation Voltage