The 10 A, 100 V PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX33B, BDX33C, BDX34B and BDX34C are complementary devices.
Features
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High DC Current Gain -
hFE = 2500 (typ.) at IC = 4.0
Collector-Emitter Sustaining Voltage at 100 mAdc
VCEO(sus) = 80 Vdc (min.) BDX33B, 34B
VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C
Low Collector-Emitter Saturation Voltage
CE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc BDX33B, 33C/34B, 34C
Monolithic Construction with Build-In Base-Emitter Shunt resistors