The APT25GP90BDQ1G IGBT transistor from Microsemi is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 900 V. Its maximum power dissipation is 417000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.