SGP02N60 数据手册 Datasheet - Siemens Semiconductor

制造商：
Siemens Semiconductor
描述：
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220AB
文档：

SGP02N60 数据手册 (12 页) Hot

更新时间： 2024/04/05 00:30:45 (UTC+8)

SGP02N60 数据手册PDF (12 页)

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SGP02N60 文档

SGP02N60 数据手册

Siemens Semiconductor

12 页, 354 KB

Infineon

Trans IGBT Chip N-CH 1200V 6.2A 62000mW 3Pin(3+Tab) TO-220 Tube

Good-Ark Electronics

eSGP 30V 2A 0.55V

Infineon

Trans IGBT Chip N-CH 1200V 6.2A 62000mW 3Pin(3+Tab) TO-220 Tube

Infineon

Trans IGBT Chip N-CH 600V 6A 3Pin(3+Tab) TO-220

Infineon

Trans IGBT Chip N-CH 600V 6A 30000mW 3Pin(3+Tab) TO-220

Good-Ark Electronics

eSGP 40V 2A 0.55V

Good-Ark Electronics

eSGP 60V 2A 0.7V

Siemens Semiconductor

Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220AB

Infineon

IGBT 6.2A, 1200V, N CHANNEL

Infineon

Trans IGBT Chip N-CH 1.2kV 6.2A 3Pin(3+Tab) TO-220

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