NAND08GW3B2CN6 数据手册 Datasheet - ST Microelectronics

更新时间： 2024/03/30 22:58:08 (UTC+8)

NAND08GW3B2CN6 数据手册PDF (57 页)

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NAND08GW3B2CN6 文档

NAND08GW3B2CN6 数据手册

ST Microelectronics

57 页, 750 KB

ST Microelectronics

1GX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

Numonyx

4 Gbit, 8 Gbit, 2112Byte/1056 word page multiplane architecture, 1.8V or 3V, NAND Flash memories

Micron

NAND Flash Parallel 3V/3.3V 8G-bit 1G x 8 25us 48Pin TSOP Tube

Micron

NAND Flash Parallel 3V/3.3V 8G-bit 1G x 8 25us 48Pin TSOP Tray

Numonyx

4 Gbit, 8 Gbit, 2112Byte/1056 word page multiplane architecture, 1.8V or 3V, NAND Flash memories

Numonyx

4 Gbit, 8 Gbit, 2112Byte/1056 word page multiplane architecture, 1.8V or 3V, NAND Flash memories

Numonyx

4 Gbit, 8 Gbit, 2112Byte/1056 Word Page 3V, NAND Flash Memories

Micron

NAND Flash Parallel 3V/3.3V 8G-bit 1G x 8 25us 48Pin TSOP Tube

Micron

Flash, 1GX8, 30ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48

Micron

Flash, 1GX8, 20ns, PBGA52

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