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© Semiconductor Components Industries, LLC, 2014
June, 2017 − Rev. 2
1 Publication Order Number:
NST3904DP6/D
NST3904DP6T5G
Dual General Purpose
Transistor
The NST3904DP6T5G device is a spin−off of our popular
SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for
general purpose amplifier applications and is housed in the SOT−963
six−leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low−power surface mount
applications where board space is at a premium.
Features
• h
FE
, 100−300
• Low V
CE(sat)
, ≤ 0.4 V
• Reduces Board Space and Component Count
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
40 Vdc
Collector−Base Voltage V
CBO
60 Vdc
Emitter−Base Voltage V
EBO
6.0 Vdc
Collector Current − Continuous I
C
200 mAdc
Electrostatic Discharge HBM
MM
ESD
Class
2
B
THERMAL CHARACTERISTICS
Characteristic (Single Heated) Symbol Max Unit
Total Device Dissipation T
A
= 25°C
Derate above 25°C (Note 1)
P
D
240
1.9
mW
mW/°C
Thermal Resistance, Junction-to-Ambient
(Note 1)
R
q
JA
520 °C/W
Total Device Dissipation T
A
= 25°C
Derate above 25°C (Note 2)
P
D
280
2.2
mW
mW/°C
Thermal Resistance, Junction-to-Ambient
(Note 2)
R
q
JA
446 °C/W
Characteristic (Dual Heated) (Note 3) Symbol Max Unit
Total Device Dissipation T
A
= 25°C
Derate above 25°C (Note 1)
P
D
350
2.8
mW
mW/°C
Thermal Resistance, Junction-to-Ambient
(Note 1)
R
q
JA
357 °C/W
Total Device Dissipation T
A
= 25°C
Derate above 25°C (Note 2)
P
D
420
3.4
mW
mW/°C
Thermal Resistance, Junction-to-Ambient
(Note 2)
R
q
JA
297 °C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
2. FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.
3. Dual heated values assume total power is sum of two equally powered channels.
SOT−963
CASE 527AD
Q
1
(1)(2)
(3)
(4) (5) (6)
Q
2
NST3904DP6T5G
ORDERING INFORMATION
www.onsemi.com
MARKING DIAGRAM
Device Package Shipping
†
NST3904DP6T5G SOT−963
(Pb−Free)
8000/Tape & Reel
E = Device Code
M = Date Code
E M
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NSVT3904DP6T5G SOT−963
(Pb−Free)
8000/Tape & Reel
