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MMBTH10
NPN SURFACE MOUNT VHF/UHF TRANSISTOR
Features
• Designed for VHF/UHF Amplifier Applications and High
Output VHF Oscillators
• High Current Gain Bandwidth Product
• Ideal for Mixer and RF Amplifier Applications with
collector currents in the 100μA - 30 mA Range
• Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
• Qualified to AEC-Q101 Standards for High
Reliability
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• Marking Information: K3H, K3Y; See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
SOT-23
Dim Min Max
A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
α
0° 8°
All Dimensions in mm
C
B
E
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
30 V
Collector-Emitter Voltage
V
CEO
25 V
Emitter-Base Voltage
V
EBO
3.0 V
Collector Current - Continuous (Note 1)
I
C
50 mA
Power Dissipation (Note 1)
P
D
300 mW
Thermal Resistance, Junction to Ambient (Note 1)
R
θ
JA
417
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage
V
(BR)CEO
25
⎯
V
I
C
= 1mA, I
B
= 0
Collector-Base Breakdown Voltage
V
(BR)CBO
30
⎯
V
I
C
= 100μA, I
E
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
3.0
⎯
V
I
E
= 10μA, I
C
= 0
Collector Cutoff Current
I
CBO
⎯
100 nA
V
CB
= 25V, I
E
= 0
Emitter Cutoff Current
I
EBO
⎯
100 nA
V
EB
= 2V, I
C
= 0
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
60
⎯ ⎯
I
C
= 4mA, V
CE
= 10.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
0.5 V
I
C
= 4mA, I
B
= 400μA
Base-Emitter On Voltage
V
BE(SAT)
⎯
0.95 V
I
C
= 4mA, V
CE
= 10.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
650
⎯
MHz
V
CE
= 10V, f = 100MHz, I
C
= 4mA
Collector-Base Capacitance
C
CB
⎯
0.7 pF
V
CB
= 10V, f = 1.0MHz, I
E
= 0
Collector-Base Feedback Capacitance
C
RB
⎯
0.65 pF
V
CB
= 10V, f = 1.0MHz, I
E
= 0
Collector-Base Time Constant Rb’Cc
⎯
9 ps
V
CB
= 10V, f = 31.8MHz, I
C
= 4mA
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch, pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
DS31031 Rev. 12 - 2 1 of 3
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MMBTH10
© Diodes Incorporated
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