下载
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 5
1 Publication Order Number:
MMBT489LT1/D
MMBT489LT1G
High Current Surface Mount
NPN Silicon Switching
Transistor for Load
Management in
Portable Applications
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
A
= 25°C)
Rating Symbol Max Unit
Collector-Emitter Voltage V
CEO
30 Vdc
Collector-Base Voltage V
CBO
50 Vdc
Emitter-Base Voltage V
EBO
5.0 Vdc
Collector Current − Continuous I
C
1.0 A
Collector Current − Peak I
CM
2.0 A
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation (Note 1)
@T
A
= 25°C
Derate above 25°C
P
D
310
2.5
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
(Note 1)
R
q
JA
403 °C/W
Total Device Dissipation (Note 2)
@T
A
= 25°C
Derate above 25°C
P
D
710
5.7
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
R
q
JA
176 °C/W
Total Device Dissipation (Single Pulse < 10 s) P
Dsingle
575 mW
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 X 1.0 inch Pad
Device Package Shipping
†
ORDERING INFORMATION
COLLECTOR
3
1
BASE
2
EMITTER
30 VOLTS, 2.0 AMPERES
NPN TRANSISTOR
SOT−23 (TO−236)
CASE 318
STYLE 6
3
2
1
http://onsemi.com
3000/Tape & ReelMMBT489LT1G SOT−23
(Pb−Free)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
N3 M G
G
N3 = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
