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© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. 8
1 Publication Order Number:
MMBT2907AWT1/D
MMBT2907AWT1G,
NSVMMBT2907AWT1G
General Purpose Transistor
PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−70/SOT−323 package which
is designed for low power surface mount applications.
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
−60 Vdc
Collector−Base Voltage V
CBO
−60 Vdc
Emitter−Base Voltage V
EBO
−5.0 Vdc
Collector Current − Continuous I
C
−600 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) T
A
= 25°C
P
D
150 mW
Thermal Resistance Junction−to−Ambient
R
q
JA
833 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
www.onsemi.com
Device Package Shipping
†
ORDERING INFORMATION
MARKING DIAGRAM
1
2
3
SC−70/SOT−323
CASE 419−04
STYLE 3
COLLECTOR
3
1
BASE
2
EMITTER
MMBT2907AWT1G SC−70
(Pb−Free)
3000 Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
20 MG
G
20 = Specific Device Code
M = Date Code
G = Pb−Free Package
1
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
NSVMMBT2907AWT1G SC−70
(Pb−Free)
3000 Tape &
Reel
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