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© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 15
1 Publication Order Number:
MJE200/D
MJE200G(NPN),
MJE210G(PNP)
Complementary Silicon
Power Plastic Transistors
These devices are designed for low voltage, low−power, high−gain
audio amplifier applications.
Features
• High DC Current Gain
• Low Collector−Emitter Saturation Voltage
• High Current−Gain − Bandwidth Product
• Annular Construction for Low Leakage
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
40 Vdc
Collector−Base Voltage V
CB
25 Vdc
Emitter−Base Voltage V
EB
8.0 Vdc
Collector Current − Continuous I
C
5.0 Adc
Collector Current − Peak I
CM
10 Adc
Base Current I
B
1.0 Adc
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
P
D
15
0.12
W
mW/_C
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
P
D
1.5
0.012
W
mW/_C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to +150
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
8.34
_C/W
Thermal Resistance, Junction−to−Ambient
R
q
JA
83.4
_C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
5.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
25 VOLTS, 15 WATTS
http://onsemi.com
MJE200G
TO−225
(Pb−Free)
500 Units / Box
MARKING DIAGRAM
Y = Year
WW = Work Week
JE2x0 = Device Code
x = 0 or 1
G = Pb−Free Package
MJE210G
TO−225
(Pb−Free)
500 Units / Box
MJE210TG
TO−225
(Pb−Free)
500 Units / Box
3
BASE
EMITTER 1
COLLECTOR 2, 4
3
BASE
EMITTER 1
COLLECTOR 2, 4
PNP NPN
TO−225
CASE 77−09
STYLE 1
1
2
3
YWW
JE2x0G
