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Motorola Small–Signal Transistors, FETs and Diodes Device Data
These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use
in ultra high speed switching applications. These devices are housed in the SC–59
package which is designed for low power surface mount applications.
• Fast t
rr
, < 3.0 ns
• Low C
D
, < 2.0 pF
• Available in 8 mm Tape and Reel
Use M1MA151/2WKT1 to order the 7 inch/3000 unit reel.
Use M1MA151/2WKT3 to order the 13 inch/10,000 unit reel.
MAXIMUM RATINGS (T
A
= 25°C)
Rating
Symbol Value Unit
Reverse Voltage
M1MA151WKT1
V
R
40
Vdc
M1MA152WKT1 80
Peak Reverse Voltage
M1MA151WKT1
V
RM
40
Vdc
M1MA152WKT1 80
Forward Current
Single
I
F
100
mAdc
Dual 150
Peak Forward Current
Single
I
FM
225
mAdc
Dual 340
Peak Forward Surge Current
Single
I
FSM
(1)
500
mAdc
Dual
FSM
750
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Power Dissipation P
D
200 mW
Junction Temperature T
J
150 °C
Storage Temperature T
stg
–55 to +150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Characteristic
Symbol Condition Min Max Unit
Reverse Voltage Leakage Current
M1MA151WKT1
I
R
V
R
= 35 V — 0.1
µAdc
M1MA152WKT1 V
R
= 75 V — 0.1
Forward Voltage V
F
I
F
= 100 mA — 1.2 Vdc
Reverse Breakdown Voltage
M1MA151WKT1
V
R
I
R
= 100 µA
40 —
Vdc
M1MA152WKT1 80 —
Diode Capacitance C
D
V
R
= 0, f = 1.0 MHz — 2.0 pF
Reverse Recovery Time t
rr
(2)
I
F
= 10 mA, V
R
= 6.0 V,
R
L
= 100 Ω, I
rr
= 0.1 I
R
— 3.0 ns
1. t = 1 SEC
2. t
rr
Test Circuit
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by M1MA151WKT1/D
SEMICONDUCTOR TECHNICAL DATA
SC–59 PACKAGE
COMMON CATHODE
DUAL SWITCHING DIODES
40/80 V–100 mA
SURFACE MOUNT
Motorola Preferred Devices
CASE 318D–03, STYLE 3
SC–59
2
1
3
Motorola, Inc. 1996
CATHODE
3
21
ANODE
REV 3
