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IRG4PSC71UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
E
G
n-channel
C
V
CES
= 600V
V
CE(on) typ.
= 1.67V
@V
GE
= 15V, I
C
= 60A
UltraFast CoPack IGBT
5/12/99
Absolute Maximum Ratings
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 600 V
I
C
@ T
C
= 25°C Continuous Collector Current 85
I
C
@ T
C
= 100°C Continuous Collector Current 60
I
CM
Pulsed Collector Current 200 A
I
LM
Clamped Inductive Load Current 200
I
F
@ T
C
= 100°C Diode Continuous Forward Current 60
I
FM
Diode Maximum Forward Current 350
V
GE
Gate-to-Emitter Voltage ± 20 V
P
D
@ T
C
= 25°C Maximum Power Dissipation 350
P
D
@ T
C
= 100°C Maximum Power Dissipation 140
T
J
Operating Junction and -55 to +150
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Benefits
PD - 91682A
W
www.irf.com 1
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
(minimum switching and conduction losses) than
prior generations
• IGBT co-packaged with HEXFRED ultrafast, ultrasoft
recovery anti-parallel diodes for use in bridge
configurations
• Industry-benchmark Super-247 package with
higher power handling capability compared to
same footprint TO-247
• Creepage distance increased to 5.35mm
• Generation 4 IGBT's offer highest efficiencies
available
• Maximum power density, twice the power
handling of TO-247, less space than TO-264
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with IGBTs
• Cost and space saving in designs that require
multiple, paralleled IGBTs
SUPER - 247
Parameter Min. Typ. Max. Units
R
θJC
Junction-to-Case - IGBT ––– ––– 0.36
R
θJC
Junction-to-Case - Diode ––– ––– 0.69 °C/W
R
θCS
Case-to-Sink, flat, greased surface ––– 0.24 –––
R
θJA
Junction-to-Ambient, typical socket mount ––– ––– 38
Recommended Clip Force 20.0(2.0) ––– ––– N (kgf)
Weight ––– 6 (0.21) ––– g (oz)
Thermal Resistance\ Mechanical
