下载
Philips Semiconductors Product specification
Triacs BT137S series
BT137M series
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT
envelope, suitable for surface
mounting, intended for use in BT137S (or BT137M)- 500 600 800
applications requiring high BT137S (or BT137M)- 500F 600F 800F
bidirectional transient and blocking BT137S (or BT137M)- 500G 600G 800G
voltage capability and high thermal V
DRM
Repetitive peak off-state 500 600 800 V
cycling performance. Typical voltages
applications include motor control, I
T(RMS)
RMS on-state current 8 8 8 A
industrial and domestic lighting, I
TSM
Non-repetitive peak on-state 65 65 65 A
heating and static switching. current
PINNING - SOT428 PIN CONFIGURATION SYMBOL
PIN Standard Alternative
NUMBER S M
1 MT1 gate
2 MT2 MT2
3 gate MT1
tab MT2 MT2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800
V
DRM
Repetitive peak off-state - 500
1
600
1
800 V
voltages
I
T(RMS)
RMS on-state current full sine wave; T
mb
≤ 102 ˚C - 8 A
I
TSM
Non-repetitive peak full sine wave; T
j
= 25 ˚C prior to
on-state current surge
t = 20 ms - 65 A
t = 16.7 ms - 71 A
I
2
tI
2
t for fusing t = 10 ms - 21 A
2
s
dI
T
/dt Repetitive rate of rise of I
TM
= 12 A; I
G
= 0.2 A;
on-state current after dI
G
/dt = 0.2 A/µs
triggering T2+ G+ - 50 A/µs
T2+ G- - 50 A/µs
T2- G- - 50 A/µs
T2- G+ - 10 A/µs
I
GM
Peak gate current - 2 A
V
GM
Peak gate voltage - 5 V
P
GM
Peak gate power - 5 W
P
G(AV)
Average gate power over any 20 ms period - 0.5 W
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 125 ˚C
temperature
1
2
3
tab
T1T2
G
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
October 1997 1 Rev 1.200
