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© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 15
1 Publication Order Number:
BD675/D
BD675G, BD675AG,
BD677G, BD677AG,
BD679G, BD679AG, BD681G
Plastic Medium-Power
Silicon NPN Darlingtons
This series of plastic, medium−power silicon NPN Darlington
transistors can be used as output devices in complementary
general−purpose amplifier applications.
Features
• High DC Current Gain
• Monolithic Construction
• Complementary to BD676, 676A, 678, 678A, 680, 680A, 682
• BD677, 677A, 679, 679A are Equivalent to MJE 800, 801, 802, 803
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
BD675G, BD675AG
BD677G, BD677AG
BD679G, BD679AG
BD681G
V
CEO
45
60
80
100
Vdc
Collector−Base Voltage
BD675G, BD675AG
BD677G, BD677AG
BD679G, BD679AG
BD681G
V
CBO
45
60
80
100
Vdc
Emitter−Base Voltage V
EBO
5.0 Vdc
Collector Current I
C
4.0 Adc
Base Current I
B
1.0 Adc
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
40
0.32
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
3.13 °C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
4.0 AMPERES
POWER TRANSISTORS
NPN SILICON
60, 80, 100 VOLTS, 40 WATTS
MARKING DIAGRAMS
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
BD6xx/BD6xxA = Device Code
x = 75, 77, 79, 81
Y = Year
WW = Work Week
G = Pb−Free Package
COLLECTOR 2, 4
BASE 3
EMITTER 1
TO−225
CASE 77−09
STYLE 1
1
2
3
YWW
BD6xxG
YWW
BD6xxAG
