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©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
BC546/547/548/549/550
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
h
FE
Classification
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage : BC546
: BC547/550
: BC548/549
80
50
30
V
V
V
V
CEO
Collector-Emitter Voltage : BC546
: BC547/550
: BC548/549
65
45
30
V
V
V
V
EBO
Emitter-Base Voltage : BC546/547
: BC548/549/550
6
5
V
V
I
C
Collector Current (DC) 100 mA
P
C
Collector Power Dissipation 500 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
Collector Cut-off Current V
CB
=30V, I
E
=0 15 nA
h
FE
DC Current Gain V
CE
=5V, I
C
=2mA 110 800
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
90
200
250
600
mV
mV
V
BE
(sat) Base-Emitter Saturation Voltage I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
700
900
mV
mV
V
BE
(on) Base-Emitter On Voltage V
CE
=5V, I
C
=2mA
V
CE
=5V, I
C
=10mA
580 660 700
720
mV
mV
f
T
Current Gain Bandwidth Product V
CE
=5V, I
C
=10mA, f=100MHz 300 MHz
C
ob
Output Capacitance V
CB
=10V, I
E
=0, f=1MHz 3.5 6 pF
C
ib
Input Capacitance V
EB
=0.5V, I
C
=0, f=1MHz 9 pF
NF Noise Figure : BC546/547/548
: BC549/550
: BC549
: BC550
V
CE
=5V, I
C
=200µA
f=1KHz, R
G
=2KΩ
V
CE
=5V, I
C
=200µA
R
G
=2KΩ, f=30~15000MHz
2
1.2
1.4
1.4
10
4
4
3
dB
dB
dB
dB
Classification A B C
h
FE
110 ~ 220 200 ~ 450 420 ~ 800
BC546/547/548/549/550
Switching and Applications
• High Voltage: BC546, V
CEO
=65V
• Low Noise: BC549, BC550
• Complement to BC556 ... BC560
1. Collector 2. Base 3. Emitter
TO-92
1
