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© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 16
1 Publication Order Number:
2N6487/D
2N6487, 2N6488 (NPN),
2N6490, 2N6491 (PNP)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and
switching applications.
Features
• High DC Current Gain
• High Current Gain − Bandwidth Product
• TO−220 Compact Package
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS (Note 1)
Rating
Symbol Value Unit
Collector−Emitter Voltage
2N6487, 2N6490
2N6488, 2N6491
V
CEO
60
80
Vdc
Collector−Base Voltage
2N6487, 2N6490
2N6488, 2N6491
V
CB
70
90
Vdc
Emitter−Base Voltage V
EB
5.0 Vdc
Collector Current − Continuous I
C
15 Adc
Base Current I
B
5.0 Adc
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
P
D
75
0.6
W
W/°C
Total Power Dissipation
@ T
A
= 25_C
Derate above 25_C
P
D
1.8
0.014
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Indicates JEDEC Registered Data.
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
1.67
_C/W
Thermal Resistance, Junction−to−Ambient
R
q
JA
70
_C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
15 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−80 VOLTS, 75 WATTS
www.onsemi.com
MARKING DIAGRAM
2N64xxG
AYWW
2N64xx = Specific Device Code
xx = See Table on Page 5
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
TO−220
CASE 221A
STYLE 1
1
2
3
4
1
BASE
EMITTER 3
COLLECTOR 2, 4
1
BASE
EMITTER 3
COLLECTOR 2, 4
PNP NPN
See detailed ordering, marking, and shipping information in
the package dimensions section on page 5 of this data sheet
.
ORDERING INFORMATION
